Actively mode-locked p-Ge laser in Faraday configuration
نویسندگان
چکیده
Active mode locking of the far-infrared p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields applied to the laser crystal. The laser generates 200 ps pulses of 80–110 cm radiation with a laser-cavity roundtrip frequency of 454 MHz. The mechanism of gain modulation by the external rf electric field is based on induced electric-field gradients inside the active crystal and requires less rf power than was found previously for Voigt geometry. © 1999 American Institute of Physics. @S0003-6951~99!01045-1#
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تاریخ انتشار 1999